Comparison ledger
Aixtron G10-GaN, Applied Materials 0020 18455 Part, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | G10-GaNAixtron | 0020 18455 PartApplied Materials |
|---|---|---|
| OEM | Aixtron | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Aixtron G10-GaN | Applied Materials 0020 18455 Part |
| Specifications | ||
| Product category | Deposition system (MOCVD)[1] | — |
| Product type | Deposition system[1] | — |
| Process | MOCVD[2] | — |
| Wafer size | 150/200 mm[2] | — |
| Application | GaN power & RF applications[2] | — |
| Throughput class | High throughput epitaxy[2] | — |
| Process chambers | 3 process chambers[2] | — |
| Cluster design | Compact cluster design[2] | — |
| Reactor technology | Planetary Reactor®[2] | — |
| Configuration | — | Shaft,Rf In Local Match, Hdpcvd,Rev3[3] |
Plan your fab
Building a Deposition process? Get a complete equipment list.
Open the fab equipment planner →