Waferpedia

Comparison ledger

0010-03254 E Chuckversus320 PC

Applied Materials 0010-03254 E Chuck, STS 320 PC, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-03254 E ChuckApplied Materials
OEMApplied MaterialsSTS
Category——
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
Family—STS 320 PC
Specifications
Type—Fully automatic computer controlled reactive ion etching system[1]
End point detection—Included[1]
Cathode diameter—30 cm[1]
Cathode area—706.5 cm2[1]
RF forward power range—10 to 600 watts[1]
Chamber max pressure—500 mTorr[1]
Substrate sizes—2 to 8 inch and small fragments[1]
Process gases—SF6, CHF3, C3F8, He, CF4, O2, and N2[1]
Sources (1)Every fact above is drawn from these public sources
  1. [1]mp.aau.dkmp.aau.dk