Comparison ledger
Applied Materials 0010-13622 RF Match for, Applied Materials P 5000 DCVD, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | P 5000 DCVDApplied Materials |
|---|---|---|
| OEM | Applied Materials | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Applied Materials P 5000 DCVD |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | — |
| Model | 0010-13622[1] | P 5000[2] |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Manufacturer | — | Applied Materials[2] |
| Process | — | Dielectric Chemical Vapor Deposition (DCVD)[2] |
| Category | — | Deposition[3] |
| Wafer size | — | up to 8 in wafers[3] |
| Film thickness | — | multiple microns thick[3] |
| Chambers | — | two dedicated chambers for dielectric PECVD[3] |
| TEOS/O2 chamber use | — | silicon dioxide[3] |
| SiH4/NH3 chamber capability | — | silicon nitrides[3] |
| Nominal operating temperature | — | ~400C[3] |
Plan your fab
Building a Deposition process? Get a complete equipment list.
Open the fab equipment planner →