Comparison ledger
Applied Materials 0010-13622 RF Match for, Applied Materials Producer GT APF, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | Producer GT APFApplied Materials |
|---|---|---|
| OEM | Applied Materials | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Applied Materials Producer |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | HDD not included[2] |
| Model | 0010-13622[1] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Wafer Size | — | 300 mm[3] |
| Chamber Configuration | — | APF TWIN Chamber (3 chambers)[3] |
| Loading Configuration | — | 3 LP / 7 cooling station / 25 wafer FOUP[3] |
| Software Version | — | pmB5.4_135[3] |
| Power Rating | — | 110 AC 3-Phase for system[3] |
| Process Gases | — | C3H6, C2H2, H2, He (HI/LO), NF3, O2, Ar (HI/LO), N2[3] |
| Optional Gas Flows | — | NF3 1000 sccm, C3H6 3000 sccm, C2H2 4000 sccm, H2 10000 sccm, Ar 15000 sccm, O2 15000 sccm, He 5000 sccm[3] |
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