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0010-13622 RF Match forversusConcept Two Dual Sequel

Applied Materials 0010-13622 RF Match for, Lam Research Concept Two Dual Sequel, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-13622 RF Match forApplied Materials
OEMApplied MaterialsLam Research
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-13622 RF Match forLam Research Concept Two
Specifications
ConfigurationHigh Efficiency HE RF Match-Bias[1]RPC (2)[2]
Model0010-13622[1]—
Product TypeRF Match for PVD (Physical Vapor Deposition)[1]—
FeatureHigh Efficiency HE RF Match-Bias[1]—
Flat Type—Semi Notched[2]
Wafer Substrate—Silicon[2]
Software Version & Build—Sequel 4.94 B 38[2]
DLVM Mfg Type—Refurb - SSEMVIT[2]
PM 2 (Left)—Sequel[2]
PM 2 (Left) Mfg Type—Refurb - SSEMVIT[2]
PM 3 (Center)—Sequel[2]
PM 3 (Center) Mfg Type—Refurb - SSEMVIT[2]
PM 4 (Right)—Blank-Off[2]
Cable Length—75 ft[2]
Wafer Cassette—Entegris FA 200-8 MT 7902[2]
Front End Option—SMIF Ready[2]
User Interface Option—SMIF Ready[2]
User Interface Options—Cleanroom (Right Side)[2]
Paddle and Arc Kits—STD[2]
Cool Station Options—4 Shelf Cool Station[2]
Particle Check Options—Particle Sensor Manifold[2]
QTY—3 Systems (Single shrink chamber and dual standard chamber)[3]
Voltage—208 V[4]
Phase—3 Phase[4]
Category—Chemical Vapor Deposition (CVD)[2]
Wafer Size—8 inch[2]
Voltage / Frequency / Phase—208 V, 50/60 Hz, 3 Phase[4]
Full Load Current—10 A[4]
Max Component Current—5 Amp[4]
Software Version—Sequel 4.94 B 38[2]
Showerhead Material—AL 6061[2]
Pressure Control—MKS[2]
Manometers—Heated[2]
Facilities Kits—Bottom[2]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]inventory listing