Comparison ledger
Applied Materials 0010-14300 Magnet Assy, Applied Materials 9500 Ion, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-14300 Magnet AssyApplied Materials | 9500 IonApplied Materials |
|---|---|---|
| OEM | Applied Materials | Applied Materials |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | Wafer orientor |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 1993 Vintage |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-14300 Magnet Assy | Applied Materials PI 9500 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | P4 Magnet Assy, IMP[2] | RGA[3] |
| Gearbox P/N | 0010-27417[2] | — |
| Part Number | 0010-14300[2] | — |
| Description | P4 Magnet Assy, IMP[2] | — |
| Frequency | — | 60 Hz[3] |
| Water fittings | — | Imperial[3] |
| Remote distance | — | ~6m umbilical[3] |
| Layout | — | Thru wall[3] |
| Wafer cassette | — | 25 wafers[3] |
| Turbo pumps type | — | Seiko Seiki[3] |
| Mech pumps type | — | Edwards[3] |
| Cryo pumps type | — | Cryotorr[3] |
| Second compressor | — | 9600 (qty 2)[3] |
| Helium line length | — | 15 m[3] |
| Factory interface | — | SECS/GEM[3] |
| Wafer size | — | Wafer orientor[3] |
| Tilt angle | — | Variable 0-7[3] |
| Wheel type | — | Standard[3] |
| Beamstop | — | Enlarged Beam Stop[3] |
| Plasma Flood System | — | HDPFS[3] |
| Beamline | — | Standard[3] |
| Source type | — | Bernas[3] |
| Front plate | — | Tungsten[3] |
| Line Frequency | — | 60 Hz[4] |
| Utilities | — | Top[4] |
| Wafer Fittings | — | Imperial[4] |
| Remote Distance | — | 6 m umbilical[4] |
| Wafer Size | — | 6 inch[3] |
| Wafer Cassette Capacity | — | 25 wafers[3] |
| Tilt Angle | — | Variable 0-7 degrees[3] |
| Front Plate Material | — | Tungsten[3] |
| Extraction Type | — | Single bellows[3] |
| TEM | — | No[3] |
| Source Chamber Liners | — | Yes[3] |
| MRS Chamber Liners | — | Yes[3] |
| Gas Position 1 | — | Boron[3] |
| Gas Position 2 | — | N/A[3] |
| Gas Position 3 | — | Available SDS[3] |
| Gas Position 4 | — | Arsine[3] |
| TFT Monitor Upgrade | — | Yes[3] |
| Wafer Orientor | — | Yes[3] |
| RGA | — | Yes[3] |
| Turbo Pump Type | — | Seiko Seiki[3] |
| Mech Pump Type | — | Edwards[3] |
| Cryo Pump Type | — | Cryotorr[3] |
| Wafer Size (Source 2) | — | 6 inch[4] |
| Wafer Cassette Capacity (Source 2) | — | 25 wafers[4] |
| Tilt Angle (Source 2) | — | Variable 0-7 degrees[4] |
| Wheel Type (Source 2) | — | Standard[4] |
| Source Type (Source 2) | — | Bernas[4] |
| Front Plate Material (Source 2) | — | Tungsten[4] |
| Extraction Type (Source 2) | — | Single Bellows[4] |
| Source Chamber Liners (Source 2) | — | Yes[4] |
| MRS Chamber Liners (Source 2) | — | Yes[4] |
| Gas Position 1 (Source 2) | — | N/A[4] |
| Gas Position 2 (Source 2) | — | N/A[4] |
| Gas Position 3 (Source 2) | — | Phosphine[4] |
| Gas Position 4 (Source 2) | — | Arsine[4] |
| TFT Monitor Upgrade (Source 2) | — | Yes[4] |
| Wafer Orienter (Source 2) | — | Yes[4] |
| RGA (Source 2) | — | No[4] |
| Line Frequency (Source 2) | — | 60 Hz[4] |
| Remote Distance (Source 2) | — | 6 m umbilical[4] |
| Layout (Source 2) | — | Through wall[4] |
| Turbo Pump Type (Source 2) | — | Leybold[4] |
| Mech Pump Type (Source 2) | — | Edwards[4] |
| Cryo Pump Type (Source 2) | — | CTI Helix Onboard[4] |
| Second Compressor (Source 2) | — | Yes 9600 (2)[4] |
| Helium Line Length (Source 2) | — | 15 m[4] |
| Hydrogen Generator | — | No[4] |
| Vaporizers | — | No[4] |
| Toxic Gas Alarm | — | No[4] |
| VESDA | — | No[4] |
| Auto Cryo Purge | — | No[4] |
| Wafer Size (Source 3) | — | 200mm[1] |
| Description (Source 3) | — | Ion Implanter (High Current)[1] |
| Gas position 4 (Arsine) | — | Arsine[3] |
| Implanter type | — | High Current[1] |
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