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Comparison ledger

0010-14300 Magnet AssyversusGSD 100

Applied Materials 0010-14300 Magnet Assy, Axcelis GSD 100, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-14300 Magnet AssyApplied Materials
GSD 100Axcelis
OEMApplied MaterialsAxcelis
CategoryIon ImplantationIon Implantation
Wafer size—No wafer top-side bar reading
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-14300 Magnet AssyAxcelis GSD
Specifications
ConfigurationP4 Magnet Assy, IMP[1]Automated Beam tuning & setup w/Eaton Autotune[2]
Gearbox P/N0010-27417[1]—
Part Number0010-14300[1]—
DescriptionP4 Magnet Assy, IMP[1]—
High Current—GSD 200 E[2]
Date of Audit—August 25, 2025[2]
Loading Configuration—Open Cassette[2]
Software Version—6.12.4[2]
Beamline version—Standard[2]
Energy Range—160 KeV[2]
Single Stage Extraction—80 keV[2]
Post Accel electrode assembly—80 -160 keV[2]
Ion Source Type—ELS[2]
Source Material—Moly[2]
Cryo compressors—CTI 9600[2]
Manufacturer—Axcelis[2]
Model—GSD 100[2]
Equipment Type—Implanter[3]
Wafer Size—6 inch[2]
GEM / SECS Interface—Present[2]
Automated Beam Tuning—Automated Beam tuning & setup w/Eaton Autotune[2]
Compatibility—4 cassette compatibility[2]
Automatic Alignment—Automatic flat or notch alignment capability with buffer cassette[2]
Process Disk—NV-GSD 200 Series Process Disk with active cooling & chiller[2]
Beamline Pump—CTI Onboard 10[2]
End Station Cryo Pump—CTI Onboard 8[2]
Source Turbo Pump—STP A 2203 C 2[2]
Gas Connections—Ar, N2[2]
Remote Disk Chiller—SMC HRS 050-WF-20[2]
External Facilities connections—Ar, N2[2]
Wafer size—No wafer top-side bar reading[2]
Source Turbo Pump (P1)—STP A 2203 C 2[2]
Beam Line Cryo Pump (P3)—CTI Onboard 10[2]
End Station Cryo Pump (P2)—CTI Onboard 8[2]
Ar—Tylan FC-2900 MEP, 5 SCCM[2]
Ar MFC—Tylan FC-2900 MEP, 5 SCCM[2]
BF3 Gas—Unit 1660 (SDS), 5 SCCM[2]
AsH3 Gas—Unit 1660 (SDS), 5 SCCM[2]
PH3 Gas—Unit 1660 (SDS), 5 SCCM[2]
Electrical Input—3-phase, 208 V[3]
Power Consumption—50 kVA[3]
Beam Current—15 mA[3]
Output Rating—160 kV[3]
Flag Faraday Injector—Present[2]
Signal Tower—Present[2]
Direct Drive—Yes[2]
Electron Shower—Yes[4]
Cell V6 Control—Yes[4]
Solaris—Yes[4]
SDS Gas Box—Yes[4]
Cassette Compatibility—4 cassette compatibility[2]
Automatic Flat/Notch Alignment—Yes, with buffer cassette[2]
Standard Manuals Included—Yes[2]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]waferpedia.comwaferpedia.com