Comparison ledger
Applied Materials 0010-16392 ESC Assembly, Plasma-Therm SLR-770, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | SLR-770Plasma-Therm |
|---|---|---|
| OEM | Applied Materials | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | 2" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | Plasma-Therm SLR 770 |
| Specifications | ||
| OEM | Applied Materials[1] | — |
| Model | 0010-16392[1] | — |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | — |
| Electrode Configuration | Dual[2] | — |
| System type | — | Shuttle lock ICP inductively coupled plasma etch system[3] |
| Controller | — | PC controller[3] |
| Load lock | — | Vacuum load lock with wafer transfer robot[3] |
| Wafer size capability | — | Can process wafers from 2" to 8" depending on which process kit is installed[3] |
| Current configuration | — | Currently configured with 3" kit[3] |
| Thermal transfer | — | Thermal transfer module for effective cooling of substrate utilizing helium backside thermal transfer in conjunction with computer controlled substrate clamping[3] |
| Plasma source | — | High frequency RF-based inductively coupled plasma source capable of high density plasma generation[3] |
| Pressure control | — | Closed loop pressure control[3] |
| Pumping | — | Turbo pump with roughing pump[3] |
| Gas controllers | — | Total of eight MFC gas controllers[3] |
| Previously used gases | — | N2, O2, CHF3, AR, CH4, CL2, BCL3, CF4[3] |
| Included accessory | — | Water chiller[3] |
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