Comparison ledger
Applied Materials 0010-16392 ESC Assembly, Tokyo Electron TE 8500 P Dry, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | TE 8500 P DryTokyo Electron |
|---|---|---|
| OEM | Applied Materials | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | Tokyo Electron TE 8500 |
| Specifications | ||
| OEM | Applied Materials[1] | — |
| Model | 0010-16392[1] | — |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | — |
| Electrode Configuration | Dual[2] | — |
| Configuration | — | 1 chamber[3] |
| Gas | — | CF4, CHF3, He[3] |
| Wafer size | — | 6 inch[4] |
| Chamber count | — | 1[3] |
| Application | — | Oxide etch with endpoint[3] |
| Process gases | — | CF4, CHF3, He[3] |
| Operating system | — | EPROM based[3] |
| Pump | — | 2ea, Kashiyama[3] |
| Vintage (reported) | — | 1996 (some units 1999)[4] |
| Etch Type | — | Oxide etch with end point[3] |
| Gases | — | CF4, CHF3, He[3] |
| Operating System | — | EPROM based system[3] |
| Pump Make | — | Kashiyama (2 units)[3] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →