Comparison ledger
Applied Materials 0010-22161 High EFF RF Match, Lam Research TCP9100, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-22161 High EFF RF MatchApplied Materials | TCP9100Lam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-22161 High EFF RF Match | Lam Research TCP9100 |
| Specifications | ||
| Make | Applied Materials[1] | — |
| Model | 0010-22161[1] | — |
| Description | HTESC PH 1 REV A[2] | — |
| Condition | Used[2] | — |
| Stock Number | BM6628[2] | — |
| Tool type | — | etcher[3] |
| Use case | — | plasma etching of CYCLOTENE films[3] |
| Example process pressure | — | 10 mTorr[3] |
| Example TCP power | — | 1500 W[3] |
| Example RF power | — | 700 W[3] |
| Example O2 flow | — | 18 sccm[3] |
| Example C2F6 flow | — | 2 sccm[3] |
| Example N2 flow | — | 40 sccm[3] |
| Example application | — | sub-micron BCB via profile etch[3] |