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0010-47763 ASSY ESC Bonded Monopolar Dual Heatedversus2100 HS

Applied Materials 0010-47763 ASSY ESC Bonded Monopolar Dual Heated, Esec 2100 HS, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMApplied MaterialsEsec
CategoryPackaging & BondingPackaging & Bonding
Wafer size—8"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-47763 ASSY ESC Bonded Monopolar Dual HeatedEsec 2100
Cited variants—
  • Esec 2100 hS iXplus[1]
  • Esec 2100 sD advanced i[2]
  • Esec 2100 hS i[2]
  • Esec 2100 SC Strip Mapping E142 on Esec Die Bonder[2]
  • Esec 2100 SSI E[2]
  • Esec 2009 SSI E[2]
  • Esec 2009 fS E[2]
  • Esec 2100 FC hS[2]
Specifications
ConfigurationRefurbished[3]208-240 Vac[4]
Power—2.3 kVA[4]
Wafer size—8" wafer ring loader[5]
Tool type—Die bonder[4]
Wafer handling—8" wafer ring loader[6]
Power supply—208 - 230 VAC (@ 47 - 63 Hz), 800 - 1100VA[7]
Bond force—0.2 to 20 N[7]
Placement speed—Up to 18500 UPH[7]
X Y placement accuracy—20 µm[7]
Overall dimensions—1785 x 1448 x 1400 mm[7]
Net weight—1400 kg[7]
Mean time between failure—> 200 h[7]
Machine type—Die bonder[2]
Process—Epoxy die attach applications[2]
Bonding method—Epoxy[2]
Bonding accuracy—20 µm @ 3σ (15 µm option)[2]
Cycle time—120 ms with Liquid Cooling option[2]
Leadframe size—Length: 90 to 300 mm; Width: 23 to 100 mm[2]
Machine dimensions—1785 x 1448 x 1400 mm (W x D x H)[2]

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Sources (7)Every fact above is drawn from these public sources
  1. [1]besi.combesi.com
  2. [2]besi.combesi.com
  3. [3]inventory listing
  4. [4]inventory listing
  5. [5]inventory listing
  6. [6]waferpedia.comwaferpedia.com
  7. [7]semiconductor.directorysemiconductor.directory