Comparison ledger
Applied Materials 0010 47763, Lam Research AutoEtch 590 plasma etcher plasma etch semiconductor, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Etch | Etch |
| Wafer size | — | 6" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Lam Research AutoEtch 590 plasma etcher plasma etch semiconductor |
| Specifications | ||
| Configuration | 2nd Source New[1] | — |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | Lam AutoEtch 590[4] |
| OEM | Applied Materials[1] | Lam Research[4] |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Category | — | Plasma Etch[4] |
| Original Equipment Manufacturer | — | Lam Research[4] |
| Condition | — | AS IS condition(No chiller, no pump, With ENI OEM 12 RF Generator)[4] |
| Wafer Size | — | 4,5,6 inch capability.[4] |
| Valid Time | — | Subject to prior sale[4] |
| Lead Time | — | Ready to go[4] |
| Warranty | — | No.[4] |
| Refund | — | No.[4] |
| Inspection | — | Against appointment[4] |
| Wafer size | — | Lam AutoEtch 590 Wafer Belt Drive System[4] |
| Wafer Size Capability | — | 4,5,6 inch[4] |
| Wafer Size Configuration | — | 4 and 6 inch configuration without hardware change[5] |
| Wafer Handling | — | In-line cassette to cassette, fully automated, single wafer[4] |
| Chamber Type | — | Double air-locked, parallel plate[4] |
| RF Generator | — | ENI OEM 12[4] |
| Display | — | CRT monitor display[4] |
| Control | — | Automatic, closed-loop feedback control, double keylocked[4] |
| Gas Panel Capacity | — | Five gases independently, actual capacity six gases (two may share fifth flow controller)[4] |
| Wafer size capability | — | 4, 5, 6 inch capability[4] |
| Process type | — | single wafer[4] |
| Automation | — | fully automated[4] |
| Wafer handling | — | cassette-to-cassette[4] |
| Chamber structure | — | double air-locked[4] |
| Plasma configuration | — | parallel plate[4] |
| Process parameters | — | RF power, chamber pressure, gas flow control, electrode spacing, and multi-step process recipes[6] |
| Control architecture | — | automatic, closed-loop feedback control[4] |
| Interlock | — | double keylocked[4] |
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