Comparison ledger
Applied Materials 0010 47763, STS Multiplex ASE ICP Deep Silicon, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | |
|---|---|---|
| OEM | Applied Materials | STS |
| Category | Etch | Etch |
| Wafer size | — | Manual wafer lock |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | STS Multiplex |
| Specifications | ||
| Configuration | 2nd Source New[1] | Low and high frequency ICP (Inductively Coupled Plasma) etch system.[4] |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | Multiplex ASE[4] |
| OEM | Applied Materials[1] | STS[4] |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | Deep Si trench etching of a single 6" [150mm] substrate[4] |
| Quantity available (source) | 1[2] | — |
| Wafer size | — | Manual wafer lock[4] |
| Equipment type | — | Deep Silicon Etcher (Inductively Coupled Plasma)[4] |
| Wafer sizes | — | 6 inch[4] |
| Wafer lock | — | Manual wafer lock[4] |
| Plasma frequency | — | Low and high frequency ICP (Inductively Coupled Plasma)[4] |
| Process description | — | ASE (Advanced Silicon Etch) process consists of alternating cycles of etching and protective polymer deposition[4] |
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