Comparison ledger
Applied Materials 0010 47763, Tokyo Electron TE 8500 P Dry, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | TE 8500 P DryTokyo Electron |
|---|---|---|
| OEM | Applied Materials | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Tokyo Electron TE 8500 |
| Specifications | ||
| Configuration | 2nd Source New[1] | 1 chamber[4] |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | Oxide etch with endpoint[4] |
| Quantity available (source) | 1[2] | — |
| Gas | — | CF4, CHF3, He[4] |
| Wafer size | — | 6 inch[5] |
| Chamber count | — | 1[4] |
| Process gases | — | CF4, CHF3, He[4] |
| Operating system | — | EPROM based[4] |
| Pump | — | 2ea, Kashiyama[4] |
| Vintage (reported) | — | 1996 (some units 1999)[5] |
| Etch Type | — | Oxide etch with end point[4] |
| Gases | — | CF4, CHF3, He[4] |
| Operating System | — | EPROM based system[4] |
| Pump Make | — | Kashiyama (2 units)[4] |
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