Waferpedia

Comparison ledger

0020 23839 Partversus1CK

Applied Materials 0020 23839 Part, Temescal 1CK, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0020 23839 PartApplied Materials
1CKTemescal
OEMApplied MaterialsTemescal
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0020 23839 PartTemescal 1CK
Cited variants—
  • Temescal 3CK SuperSource[1]
  • Temescal 2CK SuperSource[1]
  • Model 1CK[1]
  • 3CK[1]
  • 2CK[1]
Specifications
ConfigurationPlate, Sensor Clamp, Hdpcvd Ultima +[2]—
Model—1CK SuperSource[1]
Rated power—up to 8 kW[1]
Power rating—1–8 kW[1]
Drive options—Side drive or bottom drive[1]
Crucible configurations—4 x 7 cc pockets; 6 x 4 cc pockets[1]
Weight—23.5 lbs. (10.7 kg)[1]
Rotation torque—10 in. lbs. (11.5 kg·cm)[1]
Max bakeout temperature—302 °F (150 °C)[1]
Acceleration voltage—4–10 kV[1]
Operating pressure maximum—5 x 10^-4 torr (6.7 x 10^-4 mbar)[1]
Operating pressure minimum—1 x 10^-4 torr (1.33 x 10^-4 mbar)[1]
Beam deflection—270°[1]
Spot size/shape—From tight oval to diffuse oblong[1]
Evaporation rate reference—25 kÅ of aluminum at 10-in. (254-mm) source-to-substrate distance[1]
Sweep capability—Longitudinal and lateral when operated with a beam sweep controller[1]
Filament current—70 A at 12 V ac[1]
Emission current—0–1.5 A at 4–10 kV dc (8 kW max.)[1]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing