Comparison ledger
Applied Materials Centura AP AdvantEdge G 5 Dry, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura AP AdvantEdge G 5 DryApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Phase | 3 Phase[1] | — |
| Configuration | 3 Wire + G Line[1] | — |
| Chamber A Chemicals Gases Used | BCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[1] | — |
| Chamber B Chemicals Gases Used | BCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[1] | — |
| Chamber D Chemicals Gases Used | N2, O2, CF4[1] | — |
| OEM | Applied Materials[1] | — |
| Model | Centura AP AdvantEdge G 5[1] | — |
| Equipment type | Dry Etcher[1] | — |
| Electrical | 3 Phase - 3 Wire[1] | — |
| Line | G Line[1] | — |
| Frequency | 50/60 Hz[1] | — |
| Loadport | Standard Loadport[1] | — |
| Control system | Server GEM II[1] | — |
| Chamber A gases | BCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[1] | — |
| Chamber B gases | BCl3, Cl2, SO2, NF3, CH2F2, HBr, O2, N2, CF4, He, CHF3, SF6, Ar[1] | — |
| Chamber D gases | N2, O2, CF4[1] | — |
| HDD | No HDD[1] | — |
| Vintage | 2013[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] |
| Cryo DRIE etch rate | — | up to 5 µm/min[2] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[2] |
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