Comparison ledger
Applied Materials Centura AP Enabler Dielectric, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura AP Enabler DielectricApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | Diameter 300+/- 0.05mm(SEMI M28), 775 +/- 25um, Notch | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura | Oxford Instruments 100 ICP Fluorine |
| Cited variants |
| — |
| Specifications | ||
| Configuration | HDD not included[2] | — |
| Wafer Size | Diameter 300+/- 0.05mm(SEMI M28), 775 +/- 25um, Notch[2] | — |
| Online Connection | GEM / CIM JGJ (Hardware Interface : Ethernet 100Base-Tx)[2] | — |
| Inter Face | 3 carrier stage (Continuous flow operation) w/ 3 Loadports (Semi compliant[2] | — |
| Interface A | Hardware related to EDA[2] | — |
| Corrosion Resistant FI & SWLL | N/A[2] | — |
| Loader Mod Corrosion Prevent | N/A[2] | — |
| Standard SWLL | Standard SWLL[2] | — |
| Side Storage Pod | Side Storage Pod (Left/Right)[2] | — |
| OCR | KIT, YAT BACKSIDE OCR, 300MM 5.3FI[2] | — |
| Facility Plate | N2 Regulator : Supplied by customer in floor, CDA regulator 125 PSI onboard[2] | — |
| Transfer Pressure Monitor | 10 Torr Manometer and 1SLM N2 APC, kit[2] | — |
| Load Lock Pressure Monitor | GAUGE VAC MINI-CONVECTRON W/1-SETPOINT CAJON FTG analog[2] | — |
| Transfer Chamber Blade Kit | Transfer Chamber Accelerator Blade Kit[2] | — |
| LL ISO-Slit Valve Grp Elast. | AP Chemraz 513 Elastomer[2] | — |
| Interface | 3 carrier stage (Continuous flow operation) w/ 3 Loadports (Semi compliant[2] | — |
| Atmospheric Robot | KAWASAKI A3[2] | — |
| Mainframe Robot | VXP with Dual blade[2] | — |
| Loadport Type | Enhanced 25 wafer FOUP[2] | — |
| Loadports | Loadport System[2] | — |
| EMO Type | Turn to Release (Front x3, Rear x4) - 3 on FI, 1 on front of FI and one on each side of FI. Rear: 1 for each process chamber.[2] | — |
| System Monitors | Monitor #1 is Flat Panel with Keyboard on stand / Monitor #2 is through the wall flat panel (optional)[2] | — |
| Voltage | 208V, 50/60Hz[2] | — |
| Vintage | 2010[2] | — |
| Description | Dielectric Etch[3] | — |
| Version | 300mm[4] | — |
| Process Chambers | 4 process chambers[1] | — |
| Fab Interface Type | Centura Etch 5.3 FAC. Frame 5.3 Fi Rev 002[1] | — |
| RF Gen Top (162MHz Source) | 3500W RF POWER SUPPLY, 162 MHZ, FIXED FREQUENCY, 208VAC, WATER COOLED (0190-29389)[1] | — |
| RF Gen #1 Bottom (13MHz Bias) | RF GENERATOR, 13MHZ 5KW, 300MM, RACK MOUNT (0190-15319)[1] | — |
| RF Gen #2 Bottom (2MHz Bias) | RF GEN PLASMA 9KW 2MHZ ENI (0190-29586)[1] | — |
| Endpoint Type | Endpoint type (Eye-D) (0246-00196)[1] | — |
| TMP | Shimadzu D3403M, 3000 litre TMP[1] | — |
| Dry Pump | N(ESR80WN (EBARA); customer Supply)[1] | — |
| Chamber Controller Module | SBC C400MHZ, 3U CPCI, 256MB RAM[1] | — |
| Gas Line 1 | C4F6 100 sccm UNIT IFC-125[1] | — |
| Gas Line 2 | CH2F2 100 sccm UNIT IFC-125[1] | — |
| Gas Line 3 | C3F8 50 sccm UNIT IFC-125[1] | — |
| Gas Line 4 | O2_M 300 sccm UNIT-125[1] | — |
| Gas Line 5 | SO2 200 sccm UNIT IFC-125[1] | — |
| Gas Line 6 | CF4 200 sccm UNIT IFC-125[1] | — |
| Gas Line 7 | C4F6_IGI 5 sccm UNIT-125[1] | — |
| Gas Line 8 | O2_IGI 5 sccm UNIT-125[1] | — |
| Gas Line 9 | O2_L 50 sccm UNIT-125[1] | — |
| Gas Line 10 | O2_H 5000 sccm UNIT-125[1] | — |
| Gas Line 11 | Ar 2000 sccm UNIT-125[1] | — |
| Gas Line 12 | N2 200 sccm UNIT-125[1] | — |
| Gas Line 13 | CHF3 200 sccm UNIT-125[1] | — |
| Gas Line 14 | C4F8 100 sccm UNIT-125[1] | — |
| Source Bottom Ring | QUARTZ RING SOURCE, E5 (0200-07362)[1] | — |
| Showerhead Assy | Showerhead Assy, 4mm SiC Top Electrode Tokai (0041-32335)[1] | — |
| Wafer Pass Through | Not available[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[5] |
| Cryo DRIE etch rate | — | up to 5 µm/min[5] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[5] |
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