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Comparison ledger

Centura DPS+ Poly Siliconversus100 ICP Fluorine

Applied Materials Centura DPS+ Poly Silicon, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Centura DPS+ Poly SiliconApplied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer sizeWafer Mapping—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials CenturaOxford Instruments 100 ICP Fluorine
Specifications
ConfigurationThrough the Wall[1]—
Voltage208 VAC, 3 Phase, 60 Hz[1]—
Full Load Current250 A[1]—
Maximum System Rating90 KVA[1]—
Rating of LArgest Load175 A[1]—
Software Version4.8_26[1]—
Wafer sizeWafer Mapping[1]4 inch, 6 inch, 8 inch (with clamp change)[3]
Load Lock TypeNarrow Body[1]—
Robot TypeHP+[1]—
Gas Panel TypeSeriplex[1]—
System Controller5200 only[1]—
Wafer sizes6 inch[1]—
System configurationPosition A: DPS Plus, Position B: DPS Plus, Position D: DPS Plus, Position F: Wafer Orienter[1]—
Voltage/Phase208 VAC, 3 Phase, 60 Hz[1]—
System controller5200[1]—
ESC typePolyimide[1]—
Upper chamber part number0010-13833[1]—
Throttle valve part number0016-39645[1]—
Turbo chamber positionsAlcatel STPA 2203 CV at positions A, B, D[2]—
RF microwave generatorsACG-6B-02, ATLAS 2012 at positions A and B[2]—
Heat exchangerAMAT 1, quantity 2[2]—
Vintage1997[1]—
Position AChamber Type DPS Plus[1]—
Position BChamber Type DPS Plus[1]—
Position DChamber Type DPS Plus[1]—
Position FChamber Type Wafer Orienter[1]—
Throttle Valve P/N0016-39645[1]—
OEMApplied Materials[1]—
ModelCentura DPS+[1]—
CategoryEtch[2]—
Wafer mappingYes[1]—
Power208 VAC, 3 Phase, 60 Hz[2]—
Electrostatic chuckPolyimide[1]—
Through the wallYes[1]—
All cables presentYes[1]—
Independent backside HE coolYes[1]—
Signal lamp towerYes[1]—
Remote service monitorsYes[1]—
Position A chamber typeDPS Plus[2]—
Position B chamber typeDPS Plus[2]—
Position D chamber typeDPS Plus[2]—
Position F chamber typeWafer Orienter[2]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[3]
Cryo DRIE etch rate—up to 5 µm/min[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]nanofab.utah.edunanofab.utah.edu