Waferpedia

Comparison ledger

Centura DT Hart Oxideversus100 ICP Fluorine

Applied Materials Centura DT Hart Oxide, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Centura DT Hart OxideApplied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials Centura DT Hart OxideOxford Instruments 100 ICP Fluorine
Specifications
Asset number82294[1]—
Vintage2002[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
Cryo DRIE etch rate—up to 5 µm/min[2]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]nanofab.utah.edunanofab.utah.edu