Waferpedia

Comparison ledger

Centura eMax CT 3 CHversus100 ICP Fluorine

Applied Materials Centura eMax CT 3 CH, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Centura eMax CT 3 CHApplied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials Centura eMax CT 3 CHOxford Instruments 100 ICP Fluorine
Specifications
Wafer size12 inch[1]4 inch, 6 inch, 8 inch (with clamp change)[2]
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
Cryo DRIE etch rate—up to 5 µm/min[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]nanofab.utah.edunanofab.utah.edu