Comparison ledger
Applied Materials P 5000 Mark II DLH, Lam Research Concept One 150, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | P 5000 Mark II DLHApplied Materials | Concept One 150Lam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials P 5000 Mark II | Lam Research Concept One 150 |
| Cited variants |
| — |
| Specifications | ||
| Configuration | Silane[3] | TEOS[1] |
| Phase | Phase 3 Cassette Handler[3] | — |
| Wafer Size | 6 inch[3] | 6 inch[1] |
| Process | Plasma-Enhanced Chemical Vapor Deposition (PECVD)[3] | — |
| Process Variant | Silane DCVD[3] | — |
| Model | P 5000 Mark II DLH[3] | — |
| Model Variant | P 5000 Mark II DLH Delta[2] | — |
| OEM | Applied Materials[3] | — |
| Chamber Configuration | Position A: Silane DCVD, Position B: Silane DCVD, Position C: Silane DCVD, Position D: Empty[3] | — |
| Cassette Handler | Phase 3[3] | — |
| Lid Type | Bolt-Down[3] | — |
| Storage Elevator | 8 slots[3] | — |
| VME Expansion | Expanded (21 slot)[3] | — |
| Floppy Drive | Type 3 ½[3] | — |
| Controller | Mini-Controller[3] | — |
| Gas Panel | Type 28 line[3] | — |
| RF Match Type | Phase IV[3] | — |
| Endpoint Standard | Standard[3] | — |
| Cathode Type | Susceptor[3] | — |
| Lid Gas Distribution | GDP[3] | — |
| RF Generator Rack | Present[3] | — |
| Remote Frame | w/AC Box[3] | — |
| Roughing Pumps | Edwards iH600 (3 required)[3] | — |
| Load Lock Pump | Edwards iH80 series[3] | — |
| Heat Exchanger | AMAT Heat Exchanger[3] | — |
| Install Type | Through-the-wall[3] | — |
| Center Finder Board | Retrofitted for transparent and opaque substrates[3] | — |
| Software Version | 5.0.1[3] | — |
| Frame Type | — | C1-150[5] |
| Process Types | — | SiO2, SiN, Nitride[5] |
| Chamber | — | Dielectric[5] |
| Cassette Platform | — | C1 150mm[5] |
| Front, Side Monitors | — | LCD[5] |
| Process Type (SiO2) | — | SiO2[5] |
| Process Type (SiN) | — | SiN[5] |
| Process Type (Nitride) | — | Nitride[5] |
| Chamber Type (Dielectric) | — | Dielectric[5] |
| Chamber Type (Tungsten) | — | Tungsten[5] |
| Robot | — | Single Arm[5] |
| Monitor Type | — | LCD[5] |
| Communication | — | SECS / GEMS[5] |
| Micro Contamination Option | — | Yes[5] |
| Heated Valves | — | Yes[5] |
| Monitors | — | Front and side LCD[5] |
| Interface | — | SECS/GEMS[5] |
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