Comparison ledger
Applied Materials P 5000 MxP+, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | P 5000 MxP+Applied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials P 5000 MxP+ | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Voltage | 208 V, 125.0 A, 50/60 Hz, 3 Phase[1] | — |
| Largest Load Ampere Rating | 125 Amps[1] | — |
| MAximum Ampere Rating | 90 KVA[1] | — |
| Full Load Current | 250 Amps[1] | — |
| Interrupt Current | 10,000 Amps I.C.[1] | — |
| Wafer Set Size | 8"[1] | — |
| Chamber A | MxP+ Etch[1] | — |
| Chamber B | MxP+ Etch[1] | — |
| Chamber C | MxP+ Etch[1] | — |
| Configuration | Chamber A:[1] | — |
| RF Generator | OEM 12 B[1] | — |
| Baraton | 1 Torr[1] | — |
| Slit Valve | Standard[1] | — |
| Baratron | 1 Torr[1] | — |
| Make | Applied Materials[1] | — |
| Model | P 5000 MxP+[1] | — |
| Category | Etcher[1] | — |
| Wafer sizes | 8, 6 inch[1] | — |
| Wafer set size | 6"[2] | — |
| Chamber A RF generator | OEM 12 B[1] | — |
| Chamber B RF generator | OEM 12 B[1] | — |
| Chamber C RF generator | 12 B[1] | — |
| Electrical requirement | Line voltage 200/208 V[1] | — |
| Mainframe type | Standard[1] | — |
| Robot type | MK II[1] | — |
| Load lock cassette | Manual 2 Cassette[1] | — |
| Storage elevator | 15 slots[1] | — |
| Power rack | Shrink[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] |
| Cryo DRIE etch rate | — | up to 5 µm/min[3] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[3] |
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