Waferpedia

Comparison ledger

P5000versusEpsilon 2000

Applied Materials P5000, ASM Epsilon 2000, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
P5000Applied Materials
OEMApplied MaterialsASM
CategoryDepositionDeposition
Wafer size150mm150mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials P5000ASM Epsilon
Specifications
Process typeDielectric PECVD[1]CVD (Chemical Vapor Deposition)[2]
Dedicated chambersTwo[1]—
Silicon dioxide chemistryTEOS/O2[1]—
Silicon nitride chemistrySiH4/NH3 capable[1]—
Maximum wafer size8 inches[1]—
Film thicknessMultiple microns thick[1]—
Nominal operating temperature~400C[1]—
Number of chambers2[1]—
Chemistry for silicon dioxideTEOS/O2[1]—
Chemistry for silicon nitrideSiH4/NH3[1]—
Deposited film thicknessMultiple microns[1]—
Operating temperature~400°C[1]—
Supply Voltage/ Freq—480/ 50[2]
System Hand—Right Hand[2]
Monitor Type—Flat Panel[2]
Wafer Size—150mm[2]
Maint Console—Mini Maint[2]
CPU—68040[2]
Software Version—7.65[2]
Comms—HSMS[2]
RP/ ATM—RP[2]
Vacuum Load Locks—No[2]
WHC Gate Valve—Swing[2]
WHC Robot Arm—Wide[2]
Reactor Isolation—HVA[2]
ATM Valve—VAT[2]
Pressure Controller—MKS 152 Analogue[2]
PCV Type—MKS 253B[2]
Choke Valve—Yes[2]
RP Orientation—Bottom Feed[2]
Gas Panel Orientation—Top Feed[2]
Main H2/N2—100slm[2]
Wafer sizes supported—150 mm and 200 mm wafers[4]
Tool type—single-wafer epitaxy tool[4]
Supply voltage/frequency—480/50[2]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]cmdis.rpi.educmdis.rpi.edu
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]asm.comasm.com