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Comparison ledger

VIISta Plad High CurrentversusGSD 200 E 2 High Current

Applied Materials VIISta Plad High Current, Axcelis GSD 200 E 2 High Current, side by side. Every value shown is drawn from the cited encyclopedia entries.

Documented as functional equivalents— Same function class: Ion Implantation, null[1]
Side-by-side comparison of selected equipment models
Attribute
VIISta Plad High CurrentApplied Materials
OEMApplied MaterialsAxcelis
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials VIISTAAxcelis GSD 200
Cited variants—
Specifications
ConfigurationChamber only[1]Blade Server 120006095C Excluded[2]
Software Version—VM 8.0 (Virtual Machine)[2]
CIM—SECs[2]
Process—B11, BF2, As, P[2]
Handler System—Arm (Non HPES), In Air Handler[2]
Factory Interface—None[2]
Option System—Silicon Disk, SEF EGUN[2]
Process Species—B11, BF2, As, P[2]
Vintage—2001[2]
Disk Drive—Direct-Drive[3]
Dose Type—Regular[3]
Source Type—ELS4 IHC-Source without Vaporizer[3]
Main Workstation—SUN Solaris AXI 3HE (special case)[3]
Second Workstation—SUN Sparc5 on cart with printer[3]
CIM Interface—SECs[2]
Wafer Size—8 inch[2]
High Voltage Transformer—both Oil/Light[3]
Tower Color—red/yellow/green; no buzzer[3]
Network—24-port 100MB Ethernet with Cisco Router[3]
Kit Cell Controller—177[3]
Options—Accel-Highvoltage Probe installed, HPES-Upgrade installed[3]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]Equipment inventory listing
  3. [3]inventory listing
  4. [4]Equipment inventory listing