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Comparison ledger

GSD 200 E 2 Ionversus160 XP Ion

Axcelis GSD 200 E 2 Ion, Varian 160 XP Ion, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMAxcelisVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis GSD 200Varian 160 XP Ion
Specifications
High CurrentGSD-200EE[1]—
ConfigurationSoftware Version 6.12.3[1]150mm High Current IMP[3]
Ion Source TypeELS[1]—
Source Material TypeMoly[1]—
Single Stage Extraction90keV[1]—
Beamline VersionStandard[1]—
Source Turbo Pump (P1)STP H2000C[1]—
Beam Line Cryo Pump (P3)CTI Onboard 10[1]—
End Station Cryo Pump (P2)CTI Onboard 8[1]—
ManufacturerAxcelis[1]—
ModelGSD 200 E 2[1]—
CategoryIon Implantation[2]—
Wafer size6 inch[1]—
Software version6.12.3[1]—
GEM/SECS interfacePresent[1]—
Cassette capability4-cassette capability[1]—
Automated beam tuning and set-upw/Eaton Autotune[1]—
Energy range90KeV[1]—
Beamline and source pumpsBeamline and Source Pumps[2]—
Gas TypeMFC Type and Model[1]—
ArUNIT 1662 10SCCM - SDS[1]—
BF3UNIT 1662 10SCCM - SDS[1]—
AsH3UNIT 1662 10SCCM - SDS[1]—
PH3UNIT 1660 10SCCM - SDS[1]—
External Facilities ConnectionsAr N2[1]—
Cryo CompressorsCTI 9600 (1)[1]—
Remote Disk ChillerSMC-HRS050[1]—

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]waferpedia.comwaferpedia.com