Comparison ledger
Besi 2200 evo advanced, West Bond 10100, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 10100West Bond | |
|---|---|---|
| OEM | Besi | West Bond |
| Category | Packaging & Bonding | Packaging & Bonding |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Besi 2200 evo advanced | West Bond 10100 |
| Cited variants |
| — |
| Specifications | ||
| Type | G4[2] | — |
| Voltage | 400 VAC[2] | — |
| Phase | 3 Phase[2] | — |
| Power | 2.3 kVA[2] | — |
| Max Current | 3.3 A[2] | — |
| Main Breaker | D16 A[2] | — |
| SCCR | 5 kA[2] | — |
| Vacuum | -0.08 MPa[2] | — |
| Compressed Air | 0.60 MPa[2] | — |
| Nitrogen | 0.10 MPa[2] | — |
| Weight | 1,500 kg[2] | — |
| X/Y placement accuracy | ± 3 µm @ 3s[3] | — |
| Theta placement accuracy | ± 0.07° @ 3s[3] | — |
| Bond force range | 0.5N to 25N[3] | — |
| UPH die attach | up to 7,000 UPH/module[3] | — |
| UPH flip chip with dipping | up to 2,500 UPH/module[3] | — |
| UPH flip chip without dipping | up to 3,200 UPH/module[3] | — |
| Machine dimensions (L x D x H) | 1,160 mm x 1,225 mm x 1,750 mm[3] | — |
| Uptime | > 98 %[3] | — |
| Yield | > 99.95 %[3] | — |
| Die size die attach | 0.15 mm - 30 mm[3] | — |
| Die size flip chip | 0.5 mm - 30 mm[3] | — |
| Die thickness | >50 µm (thinner on request)[3] | — |
| Wafer size | 4" - 12" (SEMI M1)[3] | — |
| Frame sizes | FF070, FF105, FF108, FF123[3] | — |
| Substrate working range | 13" x 8" (325 mm x 200 mm)[3] | — |
| Heated bond head max temperature | 450°C[3] | — |
| UV curing power | up to 2,000 mW/cm2 (365 / 405 nm)[3] | — |
| Bond rotation | 0° - 360°[3] | — |
| Number of pickup tools/nozzles | up to 14[3] | — |
| Number of eject tools | 5[3] | — |
| Number of epoxies/adhesives in single pass | 3[3] | — |
| Bond force | 0.5 N – 25 N programmable[3] | — |
| Machine dimensions (LxDxH) | 1,160 mm x 1,225 mm x 1,750 mm[3] | — |
| Flip chip die size | 0.5 mm – 30 mm[3] | — |
| Heated bond head (optional) | up to 450 °C[3] | — |
| UV curing (optional) | up to 2,000 mW/cm² (365/405 nm)[3] | — |
| Supply voltage | 400 VAC, 3 phase, 50/60 Hz, 2.3 kVA[2] | — |
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