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Comparison ledger

5500 iZAversus150 e Mask

Canon 5500 iZA, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
150 e MaskSUSS MicroTec
OEMCanonSUSS MicroTec
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCanon 5500 iZASUSS MicroTec 150 e Mask
Cited variants—
Specifications
Model typei-Line (365nm) Stepper[2]—
Wafer size300mm; 200mm[2]—
Resolution≤0.35μm[2]—
Numerical Aperture (NA)0.45 ~ 0.57[2]—
Reticle size6in. (0.25in. thick)[2]—
Reduction ratio4:1[2]—
Field size26mm x 33mm[2]—
Overlay accuracy≤ 16nm (M+3)[2]—
Throughput≥93wph (300mm); ≥155wph (200mm)[2]—
Exposure wavelengthi-line (365nm)[2]—
Lamp4.5kW high-pressured mercury lamp[2]—
Overlay accuracy achieved16nm through reticle magnification compensation and through improvements in Z and tilt compensation accuracy, stage environment control accuracy, and calibration accuracy[2]—
PlatformFPA-5000 platform[2]—
ManufacturerCanon[3]—
Model5500 iZA[3]—
Tool typei-line stepper lithography system[1]—
Last confirmed dateAugust 22, 2023[3]—

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Sources (3)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]generalmanual.comgeneralmanual.com
  3. [3]Equipment inventory listing