Waferpedia

Comparison ledger

1000 Hot PlateversusIndy B L

CEE 1000 Hot Plate, Tokyo Electron Indy B L, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Indy B LTokyo Electron
OEMCEETokyo Electron
CategoryThermal / DiffusionThermal / Diffusion
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 1000 Hot PlateTokyo Electron Indy
Specifications
Configuration4"[1]N2O, NH3, SiH2Cl2, SiH4, PAC module[2]
TypeHot Plate[1]—
Wafer Size4 inch[1]12 inch[2]
Vintage—2006[4]
Processes—N2O, NH3, SiH2Cl2, SiH4, PAC module[2]
Process—DCS Nitride[3]
OEM—Tokyo Electron[2]
Model—Indy B L[2]
Equipment type—Furnace[2]
Process configuration—N2O, NH3, SiH2Cl2, SiH4, PAC module[2]
Included component—HDD[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]inventory listing