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Comparison ledger

2100 sD advanced iversusDatacon 2200 evo hS

Esec 2100 sD advanced i, Esec Datacon 2200 evo hS, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMEsecEsec
CategoryPackaging & BondingPackaging & Bonding
Wafer size4"4"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation3rd generation3rd generation
FamilyEsec 2100 sD advanced iEsec Datacon 2200 evo hS
Specifications
Bonding methodEpoxy[1]Epoxy[1]
Cycle time120 ms with Liquid Cooling option[1]120 ms with Liquid Cooling option[1]
Bonding accuracy20 µm @ 3σ (15 µm option)[1]20 µm @ 3σ (15 µm option)[1]
Wafer size4" to 12" (on 8" or 12" wafer frames)[1]4" to 12" (on 8" or 12" wafer frames)[1]
Die size0.25 mm (with Small Die Kit) to 20 mm[1]0.25 mm (with Small Die Kit) to 20 mm[1]
Leadframe sizeLength: 90 to 300 mm; Width: 23 to 100 mm[1]Length: 90 to 300 mm; Width: 23 to 100 mm[1]
Machine dimensions1785 x 1448 x 1400 mm (W x D x H)[1]1785 x 1448 x 1400 mm (W x D x H)[1]
Machine type—Die Bonder[1]
Generation—3rd generation[1]
Platform—300 mm high speed platform[1]
X/Y placement accuracy—± 7 µm @ 3 sigma[2]
Theta placement accuracy—± 0.10° @ 3 sigma[2]
Bond force—0.5 N to 75 N programmable[2]
Die attach speed—up to 12,000 UPH/module[2]
Bond head rotation—0° - 360° rotation[2]
Heated bond head—up to 450°C (optional)[2]
Machine dimensions (LxDxH)—1,160 mm x 1,225 mm x 1,750 mm[2]
Weight—1,300 kg[2]
Uptime—> 98 %[2]
Yield—> 99.95 %[2]
Die thickness—0.05 - 2 mm[2]
Frame size—FF070, FF105, FF108, FF123; automatic change (others on request)[2]
Chip tray formats—Waffle pack / Gel-Pak® 2" x 2" and 4" x 4"; JEDEC tray on request[2]
Substrate working range—13" x 8" (325 mm x 200 mm)[2]
Net weight—1300 kg[3]
Overall dimensions—1160 x 1225 x 1750 mm[3]
Standard bond head rotation—0 Degree to 360 Degree[3]
Wafer die attach size—0.18 to 5 mm[3]
Wafer die thickness—0.05 to 2 mm[3]
X Y placement accuracy—± 7 µm[3]
Placement speed—Up to 12000 UPH[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]besi.combesi.com
  2. [2]besi.combesi.com
  3. [3]semiconductor.directorysemiconductor.directory