Comparison ledger
Hitachi HS 9050, PVA TePla 300, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | HS 9050Hitachi | 300PVA TePla |
|---|---|---|
| OEM | Hitachi | PVA TePla |
| Category | Resist Processing | Resist Processing |
| Wafer size | Mini-Environment Wafer Loading Module (EFEM) | 75 mm to 100 mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Hitachi HS 9050 | PVA TePla 300 |
| Cited variants | — | |
| Specifications | ||
| Configuration | Multi-chamber[2] | — |
| Wafer size | Mini-Environment Wafer Loading Module (EFEM)[2] | — |
| Centering Unit | V-notch alignment and centering[2] | — |
| Make | Hitachi[2] | — |
| Model | HS 9050[2] | — |
| Tool type | Asher[2] | — |
| Wafer loading module | Copper Mini-Environment Wafer Loading Module (EFEM)[2] | — |
| Load ports | 3 ea 25-wafer FOUP-capable load ports with N2 purge[2] | — |
| Robot | Four Axis Robot[2] | — |
| Chamber count | 7 chamber tool[2] | — |
| Ashing units | Five (5) Ashing Units[2] | — |
| Source unit | Lambda Source Unit[2] | — |
| Capacitance manometer | 722B11TCD2FA[2] | — |
| RF power supply | AXG-5000Ⅲ-27M-KE[2] | — |
| EPD | Multi-wavelength EPD, 0.1s sampling (Spectrometer)[2] | — |
| MFC #N | N2 Max Flow 20 L/min[2] | — |
| MFC #1 | O2 Max Flow 20 L/min[2] | — |
| MFC #2 | Ar Max Flow 20 L/min[2] | — |
| MFC #3 | H2 Max Flow 5 L/min[2] | — |
| MFC #4 | N2 Max Flow 20 L/min[2] | — |
| MFC #5 | CF4 Max Flow 1 L/min[2] | — |
| MFC #6 | CO2 Max Flow 0.4 L/min[2] | — |
| MFC #7 | He Max Flow 20 L/min[2] | — |
| MFC #8 | Without gasline, without MFC[2] | — |
| MFC #9 | Without gasline, without MFC[2] | — |
| MFC #10 | Without gasline, without MFC[2] | — |
| Cooling units | Two (2) Cooling Units[2] | — |
| Plasma type | — | High frequency plasma[3] |
| Plasma frequency | — | 2.45 GHz[3] |
| Plasma power | — | 200 to 1000 W[3] |
| Gas | — | O2 (max. flow 500 ml/min)[3] |
| Chamber | — | Quartz primary vacuum chamber, Dint. 245 mm x Prof. 380 mm[3] |
| Wafer capacity | — | Quartz holders for 25 wafers[3] |
| Wafer size range | — | 75 mm to 100 mm[3] |
| Micro-electronic compatibility | — | Not micro-electronic compatible[3] |
| Category | — | Plasma etcher (resist strip / surface activation)[3] |
| Positive resist etch rate | — | 350 nm/min[3] |
| Compatibility | — | Not micro-electronic compatible; gold allowed; Si, glass, Pyrex wafers[3] |
| Power Range | — | 200 to 1000 W (or 0-1000 W)[3] |
| Process Gases | — | O2, Ar, N2, CF4[4] |
| Chamber Material | — | Quartz[3] |
| Chamber Dimensions (internal) | — | Diameter 245 mm x Depth 380 mm[3] |
| Wafer Holder Capacity | — | 25 wafers[3] |
| Wafer Size | — | 75 mm to 100 mm[3] |
| Wafer Size (alternate) | — | up to 6 inches[1] |
| Process Pressure | — | 0.6 to 1.5 mbar[1] |
| Restricted Materials | — | Materials that deteriorate in oxygen (Ag, Cu, Cr, Fe, etc.) should not be processed; no Cr or other metals in chamber[3] |
| Microwave frequency | — | 2.45 GHz[3] |
| Power range | — | 200 to 1000 W[3] |
| Batch size | — | Up to 25 wafers[3] |
| Wafer diameter (standard carrier) | — | 75 mm to 100 mm[3] |
| Process gases | — | O2, CF4, Ar, N2[4] |
| Maximum O2 flow | — | 500 ml/min[3] |
| Chamber dimensions (internal diameter x depth) | — | 245 mm x 380 mm[3] |
| Chamber internal dimensions | — | Dint. 245 mm x Prof. 380 mm[3] |
| Gas 1 | — | O2 (max. flow 500 ml/min)[3] |
| Resist strip etch rate | — | 350 nm/min depending on number of wafers[3] |
| Faraday cage | — | Available[3] |
| Process gas | — | O2 (max flow 500 ml/min)[3] |
| Chamber dimensions | — | Quartz primary vacuum chamber, Dint. 245 mm x Prof. 380 mm[3] |
| Process type | — | High-frequency plasma[3] |
| Applications | — | Photoresist stripping; wafer surface cleaning; hydrophilic surface activation of plastics surfaces[3] |
| Carrier capacity | — | Quartz holders for 25 wafers[3] |
| Not micro-electronic compatible | — | This equipment is NOT micro-electronic compatible.[3] |
Plan your fab
Building a Resist Processing process? Get a complete equipment list.
Open the fab equipment planner →