Waferpedia

Comparison ledger

S4600versusUNECS-2000

Hitachi S4600, Ulvac UNECS-2000, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
S4600Hitachi
OEMHitachiUlvac
CategoryMeasurementMeasurement
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control systemWindows—
Generation——
FamilyHitachi S4600Ulvac UNECS-2000
Specifications
Equipment nameHitachi S4600 SEM[1]—
Instrument typecold field emission high resolution scanning electron microscope[1]—
Configured detectionssecondary and backscattered electrons and characteristic X-rays[1]—
Control softwaremenu driven software[1]—
Operating systemWindows software[1]—
Analysis capabilityenergy dispersive analysis[1]—
Element rangeboron through uranium[1]—
Backscatter imaging capabilitypossible at accelerating voltages as low as 1 kV at high resolution[1]—
Phase1 Phase[2]—
Power4 kVA[2]—
Frequency60 Hz[2]—
Model—UNECS-2000[4]
OEM—ULVAC[4]
Equipment type—Ellipsometer[4]
Measurement category—Measurement[5]
Use—Measures refractive index and thickness of thin film[4]
High-speed measurement—20 ms per point[4]
Visible spectral range—Standard type: 530 nm to 750 nm; visible spectral type: 380 nm to 760 nm[4]
Sensor unit—Light-weighted and very compact; no rotating mechanism; no periodic maintenance needed[4]
Measurement type—Spectroscopic ellipsometer[4]
Measured parameters—Refractive index and thickness of thin films[4]
Measurement speed—20 ms per point[4]
Measurement method—Snapshot measurement method[4]
Spectral range (standard type)—530 nm to 750 nm[4]
Spectral range (visible type)—380 nm to 760 nm[4]
Sensor unit characteristics—Compact, light-weighted, no rotating mechanism, no periodic maintenance[4]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]nanolab.ucla.edunanolab.ucla.edu
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]nanolab.ucla.edunanolab.ucla.edu
  5. [5]nanolab.ucla.edunanolab.ucla.edu