Comparison ledger
KLA .498 PSL Wafer, KLA Candela CS 20 Surface, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ||
|---|---|---|
| OEM | KLA | KLA |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | KLA .498 PSL Wafer | KLA Candela CS 20 |
| Specifications | ||
| Configuration | NIST Traceable[1] | — |
| NIST traceability | Yes[1] | — |
| Voltage | — | 230V; 6 Amps[2] |
| Phase | — | 50/60Hz; Phase 1[2] |
| OEM | — | KLA[2] |
| Model | — | Candela CS 20[2] |
| Category | — | Metrology & Inspection[3] |
| Wafer size | — | 6 inch[2] |
| Current | — | 6 Amps[2] |
| Frequency | — | 50/60Hz[2] |
| Inspection type | — | Optical non-patterned wafer defect inspection system[4] |
| Primary application | — | Bare (non-patterned) silicon wafer surface defect detection[4] |
| Throughput | — | 30 WPH for 150 mm wafers; 27 WPH for 200 mm wafers[4] |
| Resolution | — | 83 nm[4] |
| Substrate diameter range | — | 50.8 mm – 200 mm (2″ – 8″)[4] |
| Thickness range | — | 350 µm – 1,100 µm[4] |
| Minimum detectable defect size | — | 0.3 µm (PSL sphere equivalent, ≥95% capture rate on bare Si)[4] |
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