Waferpedia

Comparison ledger

.498 PSL WaferversusIonfab 300 Plus

KLA .498 PSL Wafer, Oxford Instruments Ionfab 300 Plus, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Ionfab 300 PlusOxford Instruments
OEMKLAOxford Instruments
CategoryMetrology & InspectionMetrology & Inspection
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones—1994 Owner-stated production year
Control system——
Generation——
FamilyKLA .498 PSL WaferOxford Instruments Ionfab 300
Specifications
ConfigurationNIST Traceable[1]Ion Source[2]
NIST traceabilityYes[1]—
Diameter—35 cm[2]
Few Constraints—Cranky Valve, Defect Pressure Gauge[2]
Equipment type—Ion beam etching and deposition system[3]
Beam current—1-150 mA[4]
Beam voltage—200-1500 V[4]
Gas—Ar[4]
Base pressure—~2 x 10^-7 mbar[4]
Process pressure—> 8 x 10^-5 mbar[4]
Wafer size—100mm, or pieces attached to a 100mm transfer wafer[4]
Beam diameter—150 mm or reduced beam diameter using a selection of apertures[4]
Ion source—Ion source with 2 Ar lines available[2]
Ion source diameter—35 cm[2]
Endpoint detection—End point detector based on mass spectrometer[2]
Transfer system—Load-lock for single substrates[2]
Substrate holder—Fixed to holder in process chamber by clamping ring[2]
Backside cooling—He backside cooling available[2]
Holder cooling—Water cooled[2]
Load-lock—Automatic load-lock[4]
Specimen holder motion—Continuous rotation and tilt for directional etching at oblique angles[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]semistarcorp.comsemistarcorp.com
  4. [4]labbokning.mc2.chalmers.selabbokning.mc2.chalmers.se