Comparison ledger
Lam Research 4520, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 4520Lam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Rainbow 4520 | Oxford Instruments 100 ICP Fluorine |
| Cited variants |
| — |
| Specifications | ||
| Configuration | Envision Software[2] | — |
| Main Chamber | Top actuate clamping system[3] | — |
| Category | Etch[3] | — |
| Type | etcher[3] | — |
| System description | TCP oxide etch system[4] | — |
| Wafer size | 200 mm[4] | 4 inch, 6 inch, 8 inch (with clamp change)[5] |
| Software | Envision 1.52[4] | — |
| Wafer handling | Hine cassette indexer load / unload[3] | — |
| Loadlock | Entrance loadlock[3] | — |
| System type | single wafer, vacuum load-locked low pressure oxide etch system[1] | — |
| Load / unload | Hine cassette indexer load / unload[3] | — |
| Remote panel | Remote AC Panel[3] | — |
| Endpoint | Monochrometer[4] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[5] |
| Cryo DRIE etch rate | — | up to 5 µm/min[5] |
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