Waferpedia

Comparison ledger

SEZ SP 201 Spinversus100 ICP Fluorine

Lam Research SEZ SP 201 Spin, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
SEZ SP 201 SpinLam Research
100 ICP FluorineOxford Instruments
OEMLam ResearchOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research SEZ SP 201 SpinOxford Instruments 100 ICP Fluorine
Specifications
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[1]
Cryo DRIE etch rate—up to 5 µm/min[1]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu