Comparison ledger
OAI 806, Raith EBPG5200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 806OAI | EBPG5200Raith |
|---|---|---|
| OEM | OAI | Raith |
| Category | Lithography | Lithography |
| Wafer size | 6" | 6" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | OAI 806 | Raith EBPG5200 |
| Cited variants | — |
|
| Specifications | ||
| Model | OAI 806 Mask Aligner[2] | — |
| Patterning substrate size | up to 6 inches[2] | — |
| Contact modes | soft, hard, and proximity contact modes[2] | — |
| Alignment accuracy | submicron[2] | — |
| UV source | collimated UV light source[2] | — |
| Workholding | vacuum chuck[2] | — |
| Optics | integrated microscope optics[2] | — |
| Stage | motorized stage[2] | 6" full travel[3] |
| Optional capability | backside alignment[2] | — |
| Substrate size | up to 6 inches[2] | — |
| Light source | collimated UV[2] | — |
| Backside alignment | optional[2] | — |
| Technology | — | Direct write lithography / electron beam lithography[3] |
| Platform | — | Universal plinth platform shared with EBPG5150[3] |
| Column technology | — | EBPG Electron 100 kV[3] |
| Pattern generator | — | 125 MHz[3] |
| Beam current | — | Up to 350 nA[3] |
| Overlay accuracy | — | ≤ 5 nm[3] |
| Minimum feature size | — | Less than 8 nm[3] |
| Acceleration voltages | — | 20, 50 and 100 kV[3] |
| Large field size | — | Continuously variable up to 1 mm at all kVs[3] |
| Sample handling | — | Automatic 2 holder as standard; 10 holder optional[3] |
| Wafer size | — | 6"[4] |
| Acceleration voltage | — | 100 kV[1] |
| Maximum current | — | 350 nA[1] |
| Mainfield size | — | 1 mm[1] |
| Minimum linewidth | — | <8 nm[1] |
| Beam current range | — | 100 pA to 250 nA[5] |
| Beam step frequency | — | 500 Hz to 125 MHz[5] |
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