Comparison ledger
Oxford Instruments 100 ICP Fluorine, Plasma-Therm RIE790, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | RIE790Plasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Plasma-Therm RIE790 |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Manufacturer | — | PlasmaTherm[2] |
| Model | — | RIE790[2] |
| Process type | — | Reactive ion etch (RIE)[2] |
| Reactor type | — | Parallel plate[2] |
| Chemistries | — | SF6, CHF3, CF4, O2, Ar[2] |
| Etch targets | — | Semiconductors, dielectrics, metals[2] |
| Restriction | — | None[2] |
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