Comparison ledger
Oxford Instruments 100 ICP Fluorine, Plasma-Therm Versaline ICP Deep Silicon, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | Versaline ICP Deep SiliconPlasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Plasma-Therm Versaline ICP |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Phase | — | 208/220 VAC, 3 Phase[2] |
| Configuration | — | 30 A, 4-Wire[2] |
| Process type | — | Inductively coupled plasma etcher[2] |
| Application | — | Deep silicon etch[3] |
| Electrical requirements | — | 208/220 VAC, 3 phase, 30 A, 4-wire, 50/60 Hz[2] |
| Compatible materials | — | Si[3] |
| Incompatible materials | — | III-V / Hi K / Metal[3] |
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