Waferpedia

Comparison ledger

100 ICP FluorineversusTactras RLSA

Oxford Instruments 100 ICP Fluorine, Tokyo Electron Tactras RLSA, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
Tactras RLSATokyo Electron
OEMOxford InstrumentsTokyo Electron
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineTokyo Electron Tactras RLSA
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]—
Configuration—Oxide, Nitride, Polysilicon[2]
Chamber Type—Polysilicon Dry Etch Chamber[3]
Wafer Size—300mm[4]
Microwave Generator—Nihon Koshuha Microwave Generator, Model MKS 050B04C-OSC-V[5]
Turbo Pump—SHIMADZU FT2301D[5]
Top Generator—MKS-050B04 PS-V[5]
Bottom Generator—Daihen RGA-20C[5]
Gas Box Configuration—N2, TSA, Ar, H2, NF3, SiH4[5]
Chuck—ESC with Dual He Cooling[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]inventory listing
  3. [3]wotol.comwotol.com
  4. [4]macquarie.commacquarie.com
  5. [5]solutions-on-silicon.comsolutions-on-silicon.com