Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tokyo Electron TE 8500 P Dry, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | TE 8500 P DryTokyo Electron |
|---|---|---|
| OEM | Oxford Instruments | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tokyo Electron TE 8500 |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | 6 inch[3] |
| Configuration | — | 1 chamber[2] |
| Gas | — | CF4, CHF3, He[2] |
| Chamber count | — | 1[2] |
| Application | — | Oxide etch with endpoint[2] |
| Process gases | — | CF4, CHF3, He[2] |
| Operating system | — | EPROM based[2] |
| Pump | — | 2ea, Kashiyama[2] |
| Vintage (reported) | — | 1996 (some units 1999)[3] |
| Etch Type | — | Oxide etch with end point[2] |
| Gases | — | CF4, CHF3, He[2] |
| Operating System | — | EPROM based system[2] |
| Pump Make | — | Kashiyama (2 units)[2] |
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