Comparison ledger
Oxford Instruments 100 ICP Fluorine, Veeco RF 350 Ion Beam, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | RF 350 Ion BeamVeeco |
|---|---|---|
| OEM | Oxford Instruments | Veeco |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Veeco RF 350 Ion Beam |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Ion Source Diameter | — | 300 mm[2] |
| Ion Source Type | — | inductively coupled, filamentless RF[2] |
| Wafer Size | — | single 6" (150 mm)[2] |
| Substrate Loading | — | single-substrate loadlocked (or configurable to cassette-to-cassette)[2] |
| OEM | — | Veeco[3] |
| Model | — | RF 350[3] |
| Category | — | Etch[4] |
| Tool type | — | Ion Beam Etcher (IBE)[4] |
| Process modes | — | Ion Beam Etching (IBE) and Reactive Ion Beam Etching (RIBE)[2] |
| Ion source type | — | inductively coupled, filamentless RF ion source[4] |
| Loading | — | single 6" wafer loading[2] |
| Applications | — | MEMS, semiconductor fabrication, and data storage[2] |
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