Comparison ledger
Oxford Instruments NGP80, Oxford Instruments plasmapro-ngp80-rie, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NGP80Oxford Instruments | plasmapro-ngp80-rieOxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments NGP80 | Oxford Instruments plasmapro-ngp80-rie |
| Cited variants | — | |
| Specifications | ||
| Equipment name | Oxford NGP80 RIE[2] | Oxford NGP80 RIE[2] |
| Model | NGP80[3] | — |
| Configuration options | RIE, PECVD, RIE/PECVD[3] | — |
| Wafer size | up to 200 mm[3] | — |
| Electrode diameter | 240 mm[1] | — |
| RF power | 300 W[4] | — |
| Substrate temperature range (standard) | 5-80 °C[4] | — |
| Substrate temperature (max) | 400 °C[3] | — |
| Cryogenic temperature option | down to -150 °C[1] | — |
| Base pressure | ≤5×10⁻⁷ mbar[3] | — |
| Process pressure range | 10 mTorr to 10 Torr[3] | — |
| Gas species (RIE variant) | O2, CF4, SF6, Ar, CHF3, N2[4] | — |
| Chuck material | graphite[4] | — |
| Process Type | Reactive Ion Etch (RIE)[4] | — |
| Wafer Handling | pieces (unmounted), 100 mm, 150 mm[4] | — |
| Chuck Temperature Range | 5–80 °C[4] | — |
| Gas Species | O2, CF4, SF6, Ar, CHF3, N2[4] | — |
| Location | room W1-062[5] | — |
| Tag/alias | — | Oxford-PlasmaPro-NGP80-RIE[2] |
| Process type | — | plasma etch[2] |
| Etch chemistry | — | CHF3/Ar plasma[6] |
| Process temperature | — | 20°C[6] |
| Typical application | — | Etching of SiO2 hard mask[6] |
| plasma chemistry | — | CHF3/Ar plasma[6] |
| use | — | Etching SiO2 hard mask[6] |
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