Waferpedia

Comparison ledger

SLR-770versus1511e

Plasma-Therm SLR-770, Tegal 1511e, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
SLR-770Plasma-Therm
1511eTegal
OEMPlasma-ThermTegal
CategoryEtchEtch
Wafer size2"three- to six-inch wafers
Process node——
Introduced—1984
Production run—1984–
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyPlasma-Therm SLR 770Tegal 1511e
Specifications
System typeShuttle lock ICP inductively coupled plasma etch system[1]—
ControllerPC controller[1]—
Load lockVacuum load lock with wafer transfer robot[1]—
Wafer size capabilityCan process wafers from 2" to 8" depending on which process kit is installed[1]—
Current configurationCurrently configured with 3" kit[1]—
Thermal transferThermal transfer module for effective cooling of substrate utilizing helium backside thermal transfer in conjunction with computer controlled substrate clamping[1]—
Plasma sourceHigh frequency RF-based inductively coupled plasma source capable of high density plasma generation[1]—
Pressure controlClosed loop pressure control[1]—
PumpingTurbo pump with roughing pump[1]—
Gas controllersTotal of eight MFC gas controllers[1]—
Previously used gasesN2, O2, CHF3, AR, CH4, CL2, BCL3, CF4[1]—
Included accessoryWater chiller[1]—
tool type—tri-electrode dual-frequency plasma etch system[2]
wafer size—three- to six-inch wafers[2]
first sold—1984[2]
system characteristic—first vacuum-loadlocked dual-frequency tri-electrode etch system[2]
First vacuum-loadlocked dual-frequency tri-electrode etch system—Yes[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]nanolab.ucla.edunanolab.ucla.edu
  2. [2]web.archive.orgweb.archive.org