Comparison ledger
SUSS MicroTec 150 e Mask, SUSS MicroTec MA/BA6, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 150 e MaskSUSS MicroTec | MA/BA6SUSS MicroTec |
|---|---|---|
| OEM | SUSS MicroTec | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SUSS MicroTec 150 e Mask | SUSS MicroTec MA/BA6 |
| Cited variants | — | |
| Specifications | ||
| Type | — | Contact aligner[3] |
| Application | — | Broadband lithography[3] |
| Alignment capability | — | Backside alignment capability[3] |
| Exposure wavelengths | — | g-line (436 nm), h-line (405 nm), i-line (365 nm), UV broadband (350-450 nm)[1] |
| Illumination area | — | 150 mm diameter[1] |
| Resolution (standard) | — | 1 µm[1] |
| Resolution (best) | — | 0.6 µm in vacuum contact mode[2] |
| Topside overlay accuracy | — | 500 nm[1] |
| Backside overlay accuracy | — | 1000 nm[1] |
| Maximum wafer diameter | — | 150 mm (6 in)[1] |
| Substrate sizes | — | 1" to 150 mm diameter[4] |
| Mask sizes | — | 2.5" x 2.5" to 7" x 7"[4] |
| Maximum substrate thickness | — | 10 mm[4] |
| Lamp | — | 350 W mercury lamp[2] |
| Exposure modes | — | vacuum contact, hard contact, soft contact[2] |
| i-line band pass filter | — | removable[2] |
| Alignment accuracy | — | 0.25 - 0.5 µm[2] |
| Backside alignment | — | Yes[3] |
| Tool type | — | Contact aligner[3] |
| Alignment modes | — | Frontside and backside alignment[1] |
| Resolution | — | 1 µm[1] |
| Top side overlay accuracy | — | 500 nm[1] |
| Mask sizes supported | — | 127 mm x 127 mm (5 in.) and 178 mm x 178 mm (7 in.)[1] |
| Substrate thickness | — | 10 mm maximum substrate thickness[4] |
| Feature size | — | Down to 0.6 µm[2] |
| Exposure area | — | 6 in. diameter exposure area[2] |
| Light source | — | 350 W mercury lamp[2] |
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