Comparison ledger
Temescal 4-pocket, Temescal CV-6SXL, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 4-pocketTemescal | CV-6SXLTemescal |
|---|---|---|
| OEM | Temescal | Temescal |
| Category | Deposition | Deposition |
| Wafer size | 5" | 5" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Temescal 4-pocket | Temescal CV-6SXL |
| Specifications | ||
| Manufacturer | Temescal[1] | Temescal[1] |
| Tool type | Vacuum Deposition[1] | — |
| Description | Electron-Beam Evaporation System[1] | Electron-Beam Evaporation System[1] |
| E-beam source | Temescal 4-pocket Series 260 E-Beam turret source[1] | 4-pocket Series 260 E-Beam turret source[1] |
| Power supply | Temescal CV-6SXL 10 kV power supply[1] | 10 kV[1] |
| Controller | Temescal TemEbeam Controller (EBC)[1] | TemEbeam Controller (EBC)[1] |
| Deposition controller | Inficon IC/5 Thin Film Deposition Controller[1] | Inficon IC/5 Thin Film Deposition Controller[1] |
| Vacuum system | Cryo-pumped system with low E-7 ultimate base pressure[1] | Cryo-pumped system with low E-7 ultimate base pressure[1] |
| Vacuum sequencing | Automatic vacuum sequencing via CHA Auto-Tech II[1] | — |
| Thickness monitoring | Crystal thickness monitoring[1] | Crystal thickness monitoring[1] |
| Sample size | up to 5" diameter non-heated, 4" diameter heated[1] | Up to 5" diameter non-heated; 4" diameter heated[1] |
| Heated sample holder | Programmable, sample temps up to 370°C[1] | Programmable; sample temps up to 370°C[1] |
| Gas | Oxygen gas MFC for maintaining oxide stoichiometry[1] | — |
| E-beam sources | 2-Temescal 4-pocket series 260 e-beam sources[2] | — |
| Load-lock | Load-lock for quick turn-around[2] | — |
| Sweep control | Temescal Super Sweep e-beam sweep control[2] | — |
| Tool Type | Vacuum Deposition (Electron-Beam Evaporation System)[1] | — |
| Power Supply (Dielectric System) | Temescal CV-6SXL 10 kV power supply[1] | — |
| Power Supply (Metal System) | Temescal CV-6S 10 kV power supply[2] | — |
| E-Beam Source (Dielectric System) | Temescal 4-pocket Series 260 E-Beam turret source[1] | — |
| E-Beam Sources (Metal System) | 2-Temescal 4-pocket series 260 e-beam sources[2] | — |
| Controller (Dielectric System) | Temescal TemEbeam Controller (EBC); controls HV, beam position (8 sweep patterns per pocket), pocket position[1] | — |
| Deposition Controller | Inficon IC/5 Thin Film Deposition Controller (Dielectric); Inficon IC/5 programmable crystal thickness monitoring system (Metal)[1] | — |
| Vacuum System (Dielectric) | Cryo-pumped system with low E-7 ultimate base pressure[1] | — |
| Vacuum System (Metal) | Cryo-pumped system with ~ 5e-7 ultimate base pressure[2] | — |
| Vacuum Sequencing (Dielectric) | Automatic vacuum sequencing via CHA Auto-Tech II[1] | — |
| Vacuum Sequencing (Metal) | Automatic vacuum sequencing[2] | — |
| Sample Size (Dielectric) | up to 5" diameter non-heated, 4" diameter heated[1] | — |
| Sample Size (Metal) | 1 wafer up to 4" diameter[2] | — |
| Heated Sample Holder (Dielectric) | Programmable, sample temps up to 370°C[1] | — |
| Load-Lock (Metal System) | Load-lock for quick turn-around[2] | — |
| Sweep Control (Metal System) | Temescal Super Sweep e-beam sweep control[2] | — |
| Thickness Monitoring (Dielectric) | Crystal thickness monitoring[1] | — |
| Oxygen gas | Oxygen gas MFC for maintaining oxide stoichiometry[1] | — |
| Wafer size | 5"[3] | — |
| Model | — | CV-6SXL[1] |
| Automatic vacuum sequencing | — | CHA Auto-Tech II[1] |
| Oxygen gas MFC | — | For maintaining oxide stoichiometry[1] |
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