Comparison ledger
ABM -407B-1-S-CES293 Robot, Hitachi 9300, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 9300Hitachi | |
|---|---|---|
| OEM | ABM | Hitachi |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ABM -407B-1-S-CES293 Robot | Hitachi 9300 |
| Specifications | ||
| Model | ABM-407B-1-S-CES293[1] | 9300[3] |
| Description | ROBOT[1] | — |
| Refurbished RTP RTA | AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[1] | — |
| KLA-Tencor Spare Parts and Service | RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[1] | — |
| Refurbished Isotropic Plasma Etcher | Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[1] | — |
| Refurbished PECVD, ALD Equipment | Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[1] | — |
| Refurbished Mask Aligner | Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[1] | — |
| Refurbished Bonding | SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[1] | — |
| Refurbished Wafer Prober | Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[1] | — |
| Manufacturer | — | Hitachi[2] |
| Research status | — | Provisional entry; no specifications recorded yet[2] |
| Designation | — | Hitachi S-9300[2] |
| Tool type | — | High-resolution critical dimension scanning electron microscope (CD-SEM)[2] |
| Application | — | Semiconductor wafer metrology[2] |
| Electron source | — | Schottky emission source[4] |
| Accelerating voltage | — | 500V to 1600V, 10V steps[4] |
| Lens system | — | 3-stage electromagnetic lens system with boosting voltage[4] |
| Magnification | — | 1000X to greater than 300,000X[4] |
| Resolution | — | 3nm at 800V[4] |
| Communication interface | — | SECS/GEM[4] |
| Stage configuration | — | Dual XY stages[4] |
| Image processing | — | Hitachi microscale DSP image processing[4] |
| Imaging mode | — | Backscattered electron (BSE) mode functionality[4] |
| Static measurement accuracy | — | 3 sigma 5nm without auto-focus[4] |
| Loading reliability | — | 25 load operations without error on both ports A and B[4] |
| Throughput | — | 28 wafers per hour[4] |
| Auto-addressing accuracy | — | Within ±3.0 µm in both x and y directions[4] |
| Wafer size | — | 200 mm or 300 mm[4] |
| Field of view | — | 1.2mm[4] |
| Probe current | — | 4~24pA[4] |
| Objective aperture | — | 4-opening, click-stop, heated aperture is selectable/adjustable outside the vacuum[4] |
| Scan coil | — | 2-stage electromagnetic deflection[4] |
| Field of view / wafer imaging ability | — | Entire surface of 12 inch wafer[4] |