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Comparison ledger

-407B-1-S-CES293 RobotversusS 308 F

ABM -407B-1-S-CES293 Robot, Nikon S 308 F, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
S 308 FNikon
OEMABMNikon
Category—Lithography
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
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FamilyABM -407B-1-S-CES293 RobotNikon S 308 F
Specifications
ModelABM-407B-1-S-CES293[1]—
DescriptionROBOT[1]—
Refurbished RTP RTAAG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[1]—
KLA-Tencor Spare Parts and ServiceRS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[1]—
Refurbished Isotropic Plasma EtcherMatrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[1]—
Refurbished PECVD, ALD EquipmentCambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[1]—
Refurbished Mask AlignerCanon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[1]—
Refurbished BondingSUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[1]—
Refurbished Wafer ProberElectroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[1]—
Configuration—HDD included[2]
Light source—ArF (193 nm)[3]
Numerical aperture—0.92[3]
Exposure area—26 x 33 mm[3]
Reduction ratio—1:4[3]
Resolution—<65 nm[3]
Throughput (300 mm)—>145 wph[3]
Throughput (200 mm)—>165 wph[3]
Wafer size—200/300 mm[3]
Overlay accuracy—8 nm[3]
Polarization control—POLANO[3]
Wafer size (alternative)—12 inch[2]
Wavelength—193 nm[3]
Lens NA—0.92[3]
Polarization Control—POLANO (optional)[3]
Sources (3)Every fact above is drawn from these public sources
  1. [1]dealer listingsemistarcorp.com
  2. [2]inventory listing
  3. [3]web.archive.orgweb.archive.org