Waferpedia

Comparison ledger

0010 47763versusTCP 9600 SE Metal

Applied Materials 0010 47763, Lam Research TCP 9600 SE Metal, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010 47763Applied Materials
TCP 9600 SE MetalLam Research
OEMApplied MaterialsLam Research
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010 47763Lam Research TCP 9600
Specifications
Configuration2nd Source New[1]SECS Interface[4]
TypeMonopolar Dual Heated[2]—
DescriptionASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3]—
Possible MaterialsAl2O3 (aluminum oxide) or AlN (aluminum nitride)[2]—
Model0010-47763[1]TCP 9600 SE[4]
OEMApplied Materials[1]Lam Research[4]
Material (possible)Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2]—
ApplicationFixing wafers in etching process (PVD, CVD, ETCH)[2]—
Quantity available (source)1[2]—
Install Type—Through-the-wall[4]
Software Type—Lam Envision[4]
Software Version—E 1.5.2[4]
Electrical Requirements—208V/80A[4]
PM 1 / Main Chamber—Metal Etch[4]
Helium Cooling MFC Type—UNIT UPC8130[4]
Main On-Board AC Distribution Type—Fused[4]
DSQ Type—Hinged[4]
Endpoint Type—Monochromators[4]
Voltage—208 V[5]
Wafer Sizes—6 inch, 8 inch[6]
SECS Interface—Yes[4]
Mainframe Type—Stand Alone Etcher Mainframe[4]
Process Module—PM 1 / Main Chamber: Metal Etch[4]
Gas Box—Orbitally Welded Gas Box[4]
Backside Helium Cooling—Yes[4]
Heated Pumping Manifolds—Yes[4]
On-Board RF Generators—Yes[4]
WVDS—Yes[4]
Indexers—Hine 38A Indexers[4]
Endpoint Detection System—Yes[4]
Endpoint Lam PN—830-330546-001[4]
Chamber Liner—Yes[4]
Chamber Anodization Condition—Good[4]
Electrode Fixed Gap—Yes[4]
Wafer Clamp Type—ESC (Electrostatic Chuck)[4]
ESC Type—Polyamid[4]
Gate Valve Type—Pendulum[4]
TCP Coil Size—6"[4]
Chiller Make/Model—Edwards TCU40/80[4]
Chiller Electrical Requirements—200/208VAC / 25A[4]
Chiller Number of Cooling Channels—One[4]
Wafer Clamp—ESC[4]
Gate Valve—Pendulum[4]
# of Cooling Channels—One[4]
Gas Panel—Standard[4]
Chamber Process—Metal Etch (PM 1 / Main Chamber)[4]
RF Generators—On-Board[4]
Main AC Distribution Type—Fused[4]
Electrode Type—Fixed Gap[4]
Chiller Model—Edwards TCU40/80[4]
Number of Cooling Channels—One[4]
Additional Electrical (208 V variant)—208 V[5]
Category—Etch[4]
Main chamber—Metal Etch[4]
Chiller—Edwards TCU40/80[4]
Gas panel—Standard Gas Panel[4]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]saulcontrol.comsaulcontrol.com
  3. [3]getspares.comgetspares.com
  4. [4]inventory listing
  5. [5]inventory listing
  6. [6]Equipment inventory listing