Waferpedia

Comparison ledger

0020 12458 PartversusConcept One 200 PECVD-TEOS

Applied Materials 0020 12458 Part, Lam Research Concept One 200 PECVD-TEOS, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0020 12458 PartApplied Materials
OEMApplied MaterialsLam Research
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0020 12458 PartLam Research Concept One 200
Specifications
ConfigurationInsulator,Side Match,Hdp-Cvd Ultima Plus[1]208 Volts AC[2]
Asset number146526[1]—
MakeApplied Materials[1]Lam / Novellus[2]
Model0020 12458[1]Concept One 200[2]
Phase—3 Phase[2]
Process—PECVD-TEOS (Plasma-Enhanced Chemical Vapor Deposition - Tetraethyl Orthosilicate)[2]
Wafer Sizes—8 inch[3]
Process description—8" CCP/SiO, SiN[3]
Electrical—208 Volts AC, 3 Phase, 50/60 Hz[2]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]inventory listing