Waferpedia

Comparison ledger

0020 18698 PartversusFlexAL

Applied Materials 0020 18698 Part, Oxford Instruments FlexAL, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0020 18698 PartApplied Materials
FlexALOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0020 18698 PartOxford Instruments FlexAL
Cited variants—
  • System 100 PECVD / FlexAL ALD (thermal/plasma) cluster system[1]
Specifications
ConfigurationDial Cover, Side Local Match, Hdpcvd, Ul[2]Compatible with TiN, TaN, TiO, TaO, SiN[3]
Gases—BTBAS, TBTDMT, TDMAT, CF4[3]
Deposition method—Atomic layer deposition (ALD), thermal and plasma-assisted[1]
Wafer size—up to 200 mm[4]
Substrate temperature range—up to 550 °C[4]
Chamber temperature—up to 150 °C[4]
Film types (commissioned)—Al2O3, TiO2, HfO2, SiO2[1]
Film types (high-quality nitride superconductors)—NbN, TiN[4]
Precursors (examples)—TMA, TIIP, TEMAH, BTBAS, TBTDMT, TDMAT[1]
Gases (from listing)—BTBAS, TBTDMT, TDMAT, CF4[3]
Ozone generator—yes[4]
Residual gas analyser—yes[4]
Optical emission spectrometer (integrated)—yes[4]
Glove box (inert atmosphere)—yes[4]
Source configuration—remote plasma and thermal[4]
Cluster capability—shared loadlock with PlasmaLab 100 PECVD[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]uwaterloo.cauwaterloo.ca
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]epfl.chepfl.ch